Suitably short wavelength light for laser annealing of silicon in dsa type systems

ABSTRACT

The present invention generally relates to a thermal processing apparatus and method that permits a user to index one or more preselected light sources capable of emitting one or more wavelengths to a collimator. Multiple light sources may permit a single apparatus to have the capability of emitting multiple, preselected wavelengths. The multiple light sources permit the user to utilize multiple wavelengths simultaneously to approximate “white light”. One or more of a frequency, intensity, and time of exposure may be selected for the wavelength to be emitted. Thus, the capabilities of the apparatus and method are flexible to meet the needs of the user.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 12/142,108, filed Jun. 19, 2008, which claims benefit of U.S.provisional patent application Ser. No. 61/050,138 (APPM/011935L), filedMay 2, 2008, and both applications are herein incorporated by referencein their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention generally relate to a thermalprocessing apparatus and method.

2. Description of the Related Art

The integrated circuit (IC) market is continually demanding greatermemory capacity, faster switching speeds, and smaller feature sizes. Oneof the major steps the industry has taken to address these demands is tochange from batch processing silicon substrates in large furnaces tosingle substrate processing in a small chamber.

During single substrate processing, the substrate may be heated to ahigh temperature to allow various chemical and physical reactions totake place in multiple IC devices defined in portions of the substrate.Of particular interest, favorable electrical performance of the ICdevices may require implanted regions to be annealed. Annealingrecreates a crystalline structure from regions of the substrate thatwere previously made amorphous, and activates dopants by incorporatingtheir atoms into the crystalline lattice of the substrate. Thermalprocesses such as annealing may require providing a relatively largeamount of thermal energy to the substrate in a short amount of time, andthen rapidly cooling the substrate to terminate the thermal process.

Dynamic surface annealing (DSA) techniques have been developed to annealfinite regions on the surface of the substrate to provide well-definedannealed and/or re-melted regions on the surface of the substrate.Generally, during such processes, various regions on the surface of thesubstrate are sequentially exposed to a desired amount of energydelivered from a light source to cause the preferential heating ofdesired regions of the substrate. These techniques are preferred overconventional processes that sweep the light source energy across thesurface of the substrate because the overlap between adjacent scannedregions is strictly limited to the unused space between die, or “kurf,”lines, resulting in more uniform annealing across the desired regions ofthe substrate.

DSA techniques may utilize a single light source, such as a red laserhaving a wavelength of about 810 nm, and anneal the desired areas of thesubstrate. The red laser does not cover the entire spectrum ofwavelengths and therefore may not achieve optimum annealing. Therefore,there is a need in the art for a DSA apparatus and method that caneffectively anneal a substrate utilizing a greater portion of thespectrum of wavelengths.

SUMMARY OF THE INVENTION

The present invention generally relates to a thermal processingapparatus and method that permits a user to index one or morepreselected light sources capable of emitting one or more wavelengths toa collimator. Multiple light sources may permit a single apparatus tohave the capability of emitting multiple, preselected wavelengths. Themultiple light sources permit the user to utilize multiple wavelengthssimultaneously to approximate “white light”. One or more of a frequency,intensity, and time of exposure may be selected for the wavelength to beemitted. Thus, the capabilities of the apparatus and method are flexibleto meet the needs of the user.

In one embodiment, a thermal processing method is disclosed. The methodcomprises disposing a substrate into a processing chamber and selectinga plurality of different first electromagnetic radiation wavelengths forthermally processing the substrate. The method may also comprisediffracting the electromagnetic radiation and indexing a plurality oflight sources corresponding to the selected plurality of different firstelectromagnetic radiation wavelengths to one or more collimators. Themethod may also comprise focusing continuous wave electromagneticradiation into a line of radiation extending at least partially acrossan upper surface of the substrate to thermally process a first portionof the substrate.

In another embodiment, a thermal processing method is disclosed. Themethod comprises disposing a source of electromagnetic radiation in aprocessing chamber. The source may have a plurality of light sourceswith at least one light source of the plurality of light sources capableof emitting a different wavelength than another light source of theplurality of light sources. The method may also comprise selecting oneor more first electromagnetic radiation wavelengths for thermallyprocessing a substrate and selecting one or more of a frequency, anintensity, and a time of exposure for at least one of the one or morefirst electromagnetic radiation wavelengths. The method may alsocomprise linearly focusing the electromagnetic radiation from the sourceonto a first portion of the substrate at the selected frequency,intensity, and/or time of exposure and translating the electromagneticradiation across the substrate.

In another embodiment, a thermal flux processing device is disclosed.The device comprises a continuous wave electromagnetic radiation source.The source may comprise a plurality of light sources with at least onelight source of the plurality of light sources capable of emittingelectromagnetic radiation at a wavelength different from a second lightsource of the plurality of light sources. The device may also comprise astage configured to receive a substrate thereon and refractive opticsdisposed between the continuous wave electromagnetic radiation sourceand the stage. The optics may be configured to focus continuous waveelectromagnetic radiation from the continuous wave electromagneticradiation source into a line of continuous wave electromagneticradiation on an upper surface of the substrate. The device may alsocomprise a translation mechanism configured to translate the continuouswave electromagnetic radiation source relative to the stage.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a cross-sectional view of a thermal processing apparatus 100according to one embodiment of the invention.

FIG. 2 is a schematic isometric view of an electromagnetic radiationsource 200 according to one embodiment of the invention.

FIG. 3 is a schematic isometric view of an electromagnetic radiationsource 300 according to another embodiment of the invention.

FIG. 4 is a schematic view of a thermal processing apparatus 400performing a thermal treatment method according to one embodiment of theinvention.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

The present invention generally relates to a thermal processingapparatus and method that permits a user to index one or morepreselected light sources capable of emitting one or more wavelengths toa collimator. Multiple light sources may permit a single apparatus tohave the capability of emitting multiple, preselected wavelengths. Themultiple light sources permit the user to utilize multiple wavelengthssimultaneously to approximate “white light”. One or more of a frequency,intensity, and time of exposure may be selected for the wavelength to beemitted. Thus, the capabilities of the apparatus and method are flexibleto meet the needs of the user.

FIG. 1 is a cross-sectional view of an apparatus 100 for thermallyprocessing a semiconductor substrate, according to an embodiment of theinvention. The apparatus 100 comprises an electromagnetic radiationsource 102, a processing chamber 104, system controller 106, and optics108 disposed between the electromagnetic radiation source 102 and thesubstrate support 110. In one embodiment, the substrate 112 is asubstrate that has a high thermal conductivity, such as a single crystalsilicon substrate, silicon on insulator (SOI), silicon germanium oralloys thereof, or the like.

In one embodiment, the electromagnetic radiation source 102 is capableof emitting continuous waves or rays of electromagnetic radiation, suchas light. By continuous wave it is meant that the radiation source iscapable of emitting radiation continuously, i.e., not a burst, pulse, orflash of light. In one embodiment, the electromagnetic radiation source102 is capable of emitting radiation continuously for at least 15seconds. In another embodiment, the electromagnetic radiation source 102is adapted to deliver electromagnetic energy that is used to perform apulse laser anneal process. Typical sources of electromagnetic energyinclude, but are not limited to an optical radiation source, an electronbeam source, a microwave energy source, and a laser diode.

The optics 108 preferably comprise one or more collimators 114 tocollimate radiation 116 from the electromagnetic radiation source 102 ina direction perpendicular to the upper surface 118 of the substrate 112.This collimated radiation 120 is then focused by at least one lens 122into a line of radiation 124 at an upper surface 118 of the substrate112. Lens 122 is any suitable lens, or series of lenses, capable offocusing radiation into a desired shape, such as a line. The lens 122may be a cylindrical lens, one or more concave lenses, convex lenses,plane mirrors, concave mirrors, convex mirrors, refractive lenses,diffractive lenses, Fresnel lenses, gradient index lenses, or the like.

The apparatus 100 also comprises a translation mechanism 126 configuredto translate the line of radiation 124 and the substrate support 110relative to one another. In one embodiment, the translation mechanism126 is coupled to the electromagnetic radiation source 102 and/or theoptics 108 to move the electromagnetic radiation source 102 and/or theoptics 108 relative to the substrate support 110. In another embodiment,the translation mechanism 126 is coupled to the substrate support 110 tomove the substrate support 110 relative to the electromagnetic radiationsource 102 and/or the optics 108. In yet another embodiment, thetranslation mechanism 126 moves the electromagnetic radiation source 102and/or the optics 108, and the substrate support 110. Any suitabletranslation mechanism may be used, such as a conveyor system, rack andpinion system, mechanical actuator, or the like.

The translation mechanism 126 is preferably coupled to a systemcontroller 106 to control the scan speed at which the substrate support110 and the line of radiation 124 move relative to one another. Inaddition, the translation of the substrate support 110 and the line ofradiation 124 relative to one another may be along a path perpendicularto the line of radiation 124 and parallel to the upper surface 118 ofthe substrate 112. In another embodiment, the translation mechanism 126moves at a constant speed. In one embodiment, this constant speed isapproximately 2 cm/s for a 35 micron wide line. In another embodiment,the translation of the substrate support 110 and the line of radiation124 relative to one another is not along a path perpendicular to theline of radiation 124.

The processing chamber 104 generally contains a substrate support 110configured to receive a substrate 112 thereon, a lift assembly 128, atransparent window 130, gas delivery system 132, and a chamber 134. Thetransparent window 130 may comprise quartz, sapphire or other opticallytransparent material that allows the energy delivered from theelectromagnetic radiation source 102 to pass therethrough and heat theupper surface 118 of the substrate 112 without significant energy loss.

The gas delivery system 132 generally contains a gas source 136 and anexhaust system 138 that are in fluid communication with the processingregion 140 that is enclosed by the walls 142 of the chamber 134 and thetransparent window 130. The gas source 136 is generally adapted toprovide a flow of a gas, such as an inert gas (e.g., argon, nitrogen)into the processing region 140 to prevent the oxidation of the substratesurface 118 when it is heated by the energy delivered from theelectromagnetic radiation source 102 or heated by the heating elements144. The exhaust system 138 is generally adapted to remove the injectedgas delivered from the gas source, remove any volatile contaminantsgenerated during thermal processing, and/or evacuate the processingregion 140 to a pressure below atmospheric pressure by use ofconventional mechanical rough pump, roots blower, or other similar fluidremoval device. In one embodiment, the exhaust system 138 is adapted toevacuate the processing region 140 to a pressure less than about 300Torr.

The chamber 134 may be constructed of materials that can maintain achamber pressure below atmospheric pressure, such as about 300 Torr, anda substrate deposition temperature between about 450 degrees Celsius andabout 800 degrees Celsius. In one embodiment, the chamber 134 can bemade from a metal, such as aluminum or stainless steel that is watercooled. In one embodiment, the chamber 134 is coupled to transferchamber 146 of a conventional cluster tool that contains a robot (notshown) that is adapted to transfer a substrate to and from theprocessing region 140 of the processing chamber 104 through an accessport 148. In one configuration, the transfer chamber 146 may be isolatedfrom the processing region 140 of the processing chamber 104 by use of aconventional slit valve (not shown), or gate valve, to preventcontaminants from passing in either direction through the access port148.

The lift assembly 128 generally contains a plurality of lift pins 150and an actuator 152 (e.g., air cylinder, DC servo motor and lead screw)that are adapted to move relative to the substrate support 110 so that asubstrate 112 can be transferred to and from the substrate support 110,and to and from a substrate transferring device, such as a robot. Asshown in FIG. 1, the lift pins 150 are in the “down” position so thatthe substrate 112 can be positioned on the substrate supporting surface154 of the substrate support 110.

The substrate support 110 may comprise a platform capable of supportingthe substrate 112, as explained below. In one embodiment, the substratesupport 110 includes a means for grasping the substrate, such as africtional, gravitational, mechanical, or electrical system. Examples ofsuitable means for grasping include mechanical clamps, electrostaticchuck, vacuum chuck, or the like. In one embodiment, the substratesupport 110 contains a heating element 144 that is in electricalcommunication with temperature control assembly 156 and is in thermalcontact with a substrate 112 when it is disposed on the substratesupport 110. The heating element 144 can be a resistive heating elementthat is embedded within the support 158 of the substrate support 110. Inone embodiment, the temperature control assembly 156 is adapted tosupply power to the heating element 144 so that the substrate 112 may beheated to an elevated temperature, such as between about 450 degreesCelsius and about 800 degrees Celsius. The temperature control assembly156 generally contains a power source (not shown) and a temperaturemeasurement device (not shown) that are adapted to control and monitorthe temperature of the substrate support 110 using conventional means.

The substrate support 110 generally contains a support 158, a fluiddelivery system, and a temperature control assembly 156 that are incommunication with the system controller 106. In one embodiment, thesubstrate 112 can be supported on the fluid delivered from a fluiddelivery system to ports formed in the substrate supporting surface 154of the support 158. During one or more steps during thermal processing,a substrate 112 can be supported on a cushion of gas above the substratesupporting surface 154 due to the fluid delivered through plenum 160 tothe ports, so that a gap can be formed. The gap created by the fluid maybe between about 1 μm and about 1000 μm. In one embodiment, the support158 may be formed from a metal, ceramic, plastic, semiconductor or othermaterial used to support substrates during processing. In oneembodiment, the support 158 is made of a ceramic material, such asquartz, sapphire, silicon carbide, alumina, zirconia, aluminum nitride,or boron nitride.

The fluid delivery system, generally contains one or more fluid controlcomponents that are used to provide and control the delivery of fluid tothe ports formed in the support 154. The fluid controlling devices areadapted to control the flow, velocity and/or pressure of the fluiddelivered to the ports by use of commands sent from the systemcontroller 106. The fluid controlling devices can be conventional massflow controllers (MFCs) that are in communication with the systemcontroller 106, or a fixed orifice that is configured to deliver desiredflow at a known pressure. The control of the substrate movement can alsobe affected by the type of fluids (e.g., gasses) delivered by the one ormore ports, and thus the viscosity, atomic mass, pressure, and densityneed to be taken into account. The selection of the fluid generally mustalso take into account its affect on the process performed in theprocessing region 140.

In one embodiment, a shadow ring 162 may be disposed over a portion ofthe substrate support 110 and a substrate 112 when it is positioned onthe substrate supporting surface 154, as shown in FIG. 1. The shadowring 162 is generally designed to shadow the edge of the substrate 112to reduce any thermal uniformity edge effects and prevent substrate 112breakage as the line of radiation 124 is swept across the surface of thesubstrate 112. The shadow ring 162 may be positioned relative to thesubstrate 112 and/or substrate supporting surface 154 by use of a shadowring lift assembly (not shown) to allow the substrate to be transferredbetween the substrate supporting surface 154 and a robot (not shown)without interfering with the shadow ring 162. The shadow ring 162 may bemade of material that has a desired thermal mass, a desirable emissivityand absorption coefficient, and is able to withstand the energydelivered by the electromagnetic radiation source 102.

The electromagnetic radiation source 102 may comprise a plurality ofelectromagnetic radiation sources 102 and be controlled by a controller164. The electromagnetic radiation source 102 may comprise a pluralityof light sources that permit a user to select one or more light sourcesfor radiating the substrate 112. In one embodiment, a single lightsource may be selected. In another embodiment, multiple light sourcesmay be selected. In another embodiment, multiple light sources capableof emitting substantially the same wavelength may be selected. Inanother embodiment, multiple light sources capable of emitting differentwavelengths may be selected.

The individual light sources may be indexed to the collimator 114 toindividually radiate a predetermined wavelength. A user preselects adesired wavelengths for exposing the substrate 112. The controller 164then selectively indexes the particular light source to the collimator114. In one embodiment, the light source may be capable of emitting awavelength in the visible range. In another embodiment, the light sourcemay be capable of emitting a wavelength in the ultraviolet range. Inanother embodiment, the light source may be capable of emitting awavelength in the near ultraviolet range. In another embodiment, thelight source may be capable of emitting a wavelength in the deepultraviolet range. In another embodiment, the light source may becapable of emitting a wavelength in the infrared range. In anotherembodiment, the light source may be capable of emitting a wavelength inthe near infrared range. In another embodiment, the light source may becapable of emitting a wavelength in the deep infrared range.

In one embodiment, a user may preselect a plurality of wavelengths forexposing the substrate 112. The controller 164 then indexes theplurality of light sources to the collimator 114. In one embodiment,light sources may be capable of emitting one or more wavelengths in arange selected from the group consisting of the visible range, theultraviolet range, the near ultraviolet range, the deep ultravioletrange, the infrared range, near infrared range, the deep infrared range,and combinations thereof.

The user may preselect the intensity of the electromagnetic radiation,frequency of the electromagnetic radiation, and time of exposure of theelectromagnetic radiation. Additionally, the user may adjust theintensity, frequency, and time of exposure to suit the needs of theprocess. The adjusting may occur between exposures or during exposures.The adjusting may occur based upon real time feedback from metrologyresults.

The optics 108 may diffract and/or reflect the selected wavelength orwavelengths passing therethrough such that the light emitting in a lineof radiation 124 has a wavelength that is less than a critical dimensionof the substrate. In one embodiment, the light emitted in a line ofradiation 124 has a wavelength that is about one fourth of thewavelength originally emitted by the electromagnetic radiation source102. When a plurality of wavelengths are emitted from theelectromagnetic radiation source 102, the average wavelength, afterdiffraction and/or reflection, may be less than or equal to the criticaldimension of the substrate. The critical dimension may be about 65 nm orless. In one embodiment, the critical dimension may be about 45 nm orless. In one embodiment, the electromagnetic radiation source 102 mayemit light having a wavelength between about 150 nm and about 200 nm,and the average wavelength after diffraction and/or reflection may beless than or equal to the critical dimension of the substrate. In oneembodiment, the wavelength after diffraction and/or reflection may beless than about two thirds of the critical dimension. By selecting awavelength that, after diffraction and/or reflection, is less than thecritical dimension, precise control of the substrate exposure may occur.

In one embodiment, the light source may comprise a laser diode. Inanother embodiment, the plurality of light sources may comprise one ormore laser diodes. Thus, a plurality of laser diodes may be utilized.The laser diodes may emit light at the same wavelength or at differentwavelengths. In one embodiment, the laser diodes may comprise a redlaser diode emitting light having a wavelength between about 630 nm toabout 700 nm, an orange laser diode emitting light having a wavelengthbetween about 590 nm and about 630 nm, a yellow laser diode emitting alight having a wavelength between about 560 nm and about 590 nm, aviolet laser emitting a light having a wavelength between about 400 toabout 450 nm, a blue laser diode emitting a light having a wavelengthbetween about 450 nm and about 490 nm, and a green laser diode emittinga light having a wavelength between about 490 nm to about 560 nm. In oneembodiment, the electromagnetic radiation source 102 is adapted todeliver energy at a wavelength less than about 1064 nm to a primarilysilicon containing substrate. In one aspect of the invention it may bedesirable to use an Nd:YAG (neodymium-doped yttrium aluminum garnet)laser that is adapted to deliver energy at a wavelength between about266 nm and about 1064 nm. In one embodiment, the power of the laserdiodes may be in the range of 0.5 kW to 50 kW. Suitable laser diodes aremade by Spectra-Physics of California, or by Cutting Edge Optronics,Inc. of St. Charles Mo.

FIG. 2 is a schematic isometric view of an electromagnetic radiationsource 200 according to one embodiment of the invention. The source 200comprises a plurality of light sources 202, 204, 206, 208, 210, 212,214, 216 that each may be selectively indexed to the collimator forindividual selection. The electromagnetic radiation source 200 may bemoved in two separate planes as shown by arrows “A” and “B” to index thelight sources 202, 204, 206, 208, 210, 212, 214, 216 to a collimator.The intensity, frequency, and time of exposure for the electromagneticradiation emitted from the light sources 202, 204, 206, 208, 210, 212,214, 216 may be preselected by a user. In one embodiment, the intensity,frequency, and time of exposure for the electromagnetic radiationemitted from the light sources 202, 204, 206, 208, 210, 212, 214, 216may be adjusted by a user. The adjusting may occur before exposure ofthe substrate, between exposure of the substrate, and/or during exposureof the substrate.

In one embodiment, a plurality light sources 202, 204, 206, 208, 210,212, 214, 216 may be utilized simultaneously. In another embodiment,different light sources 202, 204, 206, 208, 210, 212, 214, 216 may beutilized in sequence. In another embodiment, all of the light sources202, 204, 206, 208, 210, 212, 214, 216 may be utilized simultaneously.The light sources 202, 204, 206, 208, 210, 212, 214, 216 maycollectively emit wavelengths in a range selected from the groupconsisting of the visible range, the ultraviolet range, the nearultraviolet range, the deep ultraviolet range, the infrared range, nearinfrared range, the deep infrared range, and combinations thereof. Thelight sources 202, 204, 206, 208, 210, 212, 214, 216 may be selectivelyand/or collectively and/or sequentially applied to radiate all colors ofthe visible spectrum to the substrate. Thus, the light sources 202, 204,206, 208, 210, 212, 214, 216 may be selected such that the substrate isexposed to “white light” or an approximation of “white light”. “Whitelight” is a blend of at least two different wavelengths of light in thevisible spectrum. For example, a light source that emits light at awavelength in the blue spectrum may emit a light that is mixed with alight from the yellow spectrum to produce a light that appears white tothe naked eye. In another example, a light source that emits a light ata wavelength in the blue spectrum may be mixed with a wavelength in thered spectrum and a wavelength in the green spectrum to produce a lightthat appears white to the naked eye. In another example, all of thewavelengths of the visible spectrum may be emitted together to produce alight that appears white.

In one embodiment, at least one of the light sources 202, 204, 206, 208,210, 212, 214, 216 is capable of emitting electromagnetic radiation at awavelength that, after diffraction and/or reflection, is less than thecritical dimension of a feature formed on a substrate to be exposed. Inanother embodiment, at least one of the light sources 202, 204, 206,208, 210, 212, 214, 216 is capable of emitting electromagnetic radiationat a wavelength that, after reflection and/or diffraction, is less thantwo-thirds of the critical dimension of a feature formed on a substrateto be exposed. In one embodiment, a light source may emit a radiationwith a wavelength in the infrared spectrum, simultaneous with a lightsource that emits radiation with a wavelength in the visible spectrum,simultaneous with a light source that emits radiation with a wavelengthin the infrared spectrum. The proportions of the multiple wavelengthsmay be varied to balance out pattern effects.

FIG. 3 is a schematic isometric view of an electromagnetic radiationsource 300 according to another embodiment of the invention. The source300 comprises a plurality of light sources 302, 304, 306, 308, 310, 312,314, 316, 318 that each may be selectively indexed to the collimator forindividual selection. The electromagnetic radiation source 300 may berotated about an axis 320 as shown by arrows “C” to index the individuallight sources 302, 304, 306, 308, 310, 312, 314, 316, 318 to acollimator. The intensity, frequency, and time of exposure for theelectromagnetic radiation emitted from the light sources 302, 304, 306,308, 310, 312, 314, 316, 318 may be preselected by a user. In oneembodiment, the intensity, frequency, and time of exposure for theelectromagnetic radiation emitted from the light sources 302, 304, 306,308, 310, 312, 314, 316, 318 may be adjusted by a user. The adjustingmay occur before exposure of the substrate, between exposure of thesubstrate, and/or during exposure of the substrate.

In one embodiment, a plurality light sources 302, 304, 306, 308, 310,312, 314, 316, 318 may be utilized simultaneously. In anotherembodiment, different light sources 302, 304, 306, 308, 310, 312, 314,316, 318 may be utilized in sequence. In another embodiment, all of thelight sources 302, 304, 306, 308, 310, 312, 314, 316, 318 may beutilized simultaneously. The light sources 302, 304, 306, 308, 310, 312,314, 316, 318 may collectively emit wavelengths in a range selected fromthe group consisting of the visible range, the ultraviolet range, thenear ultraviolet range, the deep ultraviolet range, the infrared range,near infrared range, the deep infrared range, and combinations thereof.The light sources 302, 304, 306, 308, 310, 312, 314, 316, 318 may beselectively and/or collectively and/or sequentially applied to radiateall colors of the visible spectrum to the substrate. Thus, the lightsources 302, 304, 306, 308, 310, 312, 314, 316, 318 may be selected suchthat the substrate is exposed to “white light” or an approximation of“white light”. In one embodiment, at least one of the light sources 302,304, 306, 308, 310, 312, 314, 316, 318 is capable of emittingelectromagnetic radiation at a wavelength that, after diffraction and/orreflection, is less than the critical dimension of a feature formed on asubstrate to be exposed. In another embodiment, at least one of thelight sources 302, 304, 306, 308, 310, 312, 314, 316, 318 is capable ofemitting electromagnetic radiation at a wavelength that, afterdiffraction and/or reflection, is less than two-thirds of the criticaldimension of a feature formed on a substrate to be exposed.

FIG. 4 is a schematic view of a thermal processing apparatus 400performing a thermal treatment method according to one embodiment of theinvention. A portion 404 of substrate 402 near its edge 406 is annealed.The electromagnetic energy 408 radiating from source 410 heats portion404, while edge portion 412 remains unheated. In operation, the userpreselects one or more wavelengths with which to expose the substrate. Acontroller then indexes one or more light sources within the source 410to the substrate 402 and exposes the substrate 402 to theelectromagnetic radiation from the source 410.

When the user preselects the one or more wavelengths, the wavelengthsmay, comprise a wavelength in the visible spectrum. In one embodiment,the wavelengths may comprise the entire visible spectrum, thus producing“white light”. In another embodiment, one or more of the wavelengths maybe from the ultraviolet range, the near ultraviolet range, the deepultraviolet range, the infrared range, near infrared range, the deepinfrared range, and combinations thereof. In one embodiment, thewavelengths may be greater than 840 nm. In another embodiment, thewavelengths may be less than 800 nm.

During the exposure, the user may adjust the time of the exposure, thefrequency of the exposure, and/or the intensity of the exposure. Theuser may sequentially expose the same portion of the substrate 402 tomultiple different wavelengths. The substrate 402 may have featureshaving critical dimensions. Thus, the user may select the wavelengthsuch that after diffraction and/or reflection, is less than the criticaldimensions. In one embodiment, the wavelength may be less than about twothirds of the critical dimension.

By providing light sources of a plurality of different wavelengths on athermal processing apparatus, a user may select one or more desiredwavelength for exposure of a substrate. Thus, a single apparatus may bescalable to meet the individual needs of the user for dynamic surfaceannealing.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A thermal flux processing device, comprising: a continuous waveelectromagnetic radiation source comprising a plurality of lightsources, wherein at least one light source of the plurality of lightsources emits electromagnetic radiation at a wavelength different from asecond light source of the plurality of light sources; a stagepositioned to receive a substrate thereon; refractive optics disposedbetween the continuous wave electromagnetic radiation source and thestage, wherein the refractive optics focuses continuous waveelectromagnetic radiation from the continuous wave electromagneticradiation source into a line of continuous wave electromagneticradiation on an upper surface of the substrate; and a translationmechanism positioned to translate the continuous wave electromagneticradiation source relative to the stage.
 2. The device of claim 1,further comprising a controller programmed to selectively emitelectromagnetic radiation from one or more of the light sources.
 3. Thedevice of claim 2, wherein the controller is programmed to selectivelyemit electromagnetic radiation from a plurality of light sourcessimultaneously having different wavelengths.
 4. The device of claim 1,wherein the multiple light sources collectively emit radiationencompassing the entire spectrum of visible light.
 5. The device ofclaim 1, wherein the multiple light sources comprise at least one lightsource that emits red light, at least one light source that emits orangelight, at least one light source that emits yellow light, at least onelight source that emits green light, at least one light source thatemits blue light, and at least one light source that emits violet light.6. The device of 5, wherein the multiple light sources comprise at leastone light source that emits near ultraviolet light or at least one lightsource that emits infrared light.
 7. The device of claim 1, furthercomprising a controller programmed to control one or more of anintensity, a time of exposure, and a frequency of the electromagneticradiation.
 8. The device of claim 1, wherein the plurality of lightsources are arranged in an array.
 9. The device of claim 8, furthercomprising: an indexing mechanism, wherein the plurality of lightsources are arranged in a circular array, and wherein the indexingmechanism is positioned to rotate the circular array of light sources.10. The device of claim 8, further comprising: an indexing mechanism,wherein the plurality of light sources are arranged in a rectangulararray, and wherein the indexing mechanism is positioned to linearlytranslate the rectangular array of light sources.
 11. The device ofclaim 1, wherein the translation mechanism is positioned to translate atleast one of the continuous wave electromagnetic radiation source andthe stage relative to the other.
 12. The device of claim 1, wherein therefractive optics comprises: at least one collimator; and at least onelens.
 13. A thermal flux processing system, comprising: a processingchamber; a continuous wave electromagnetic radiation source positionedoutside of the processing chamber and comprising a plurality of lightsources, wherein at least one light source of the plurality of lightsources emits electromagnetic radiation at a wavelength different from asecond light source of the plurality of light sources; a stagepositioned within the processing chamber to receive a substrate thereon;refractive optics disposed between the continuous wave electromagneticradiation source and the stage, the refractive optics positioned tofocus continuous wave electromagnetic radiation from the continuous waveelectromagnetic radiation source into a line of continuous waveelectromagnetic radiation on an upper surface of the substrate; and atranslation mechanism positioned to translate the continuous waveelectromagnetic radiation source relative to the stage.
 14. The systemof claim 13, wherein the processing chamber comprises: a chambercomprising aluminum or stainless steel; and a window coupled to thechamber, wherein the window is positioned between the stage and thecontinuous wave electromagnetic radiation source.
 15. The system ofclaim 14, wherein the window comprises quartz or sapphire.
 16. Thesystem of claim 14, wherein the processing chamber further comprises: alift assembly coupled to the stage; and a heating element disposedwithin the stage.
 17. The system of claim 16, wherein the lift assemblycomprises: a plurality of lift pins disposed through the stage; and anactuator.
 18. The system of claim 14, further comprising: a gas deliverysystem having a gas source fluidly coupled to the processing chamber;and an exhaust system fluidly coupled to the processing chamber.
 19. Athermal flux processing device, comprising: a continuous waveelectromagnetic radiation source comprising a plurality ofelectromagnetic radiation sources, wherein at least one electromagneticradiation source of the plurality of electromagnetic radiation sourcesemits electromagnetic radiation at a wavelength different from a secondelectromagnetic radiation source of the plurality of electromagneticradiation sources; a stage positioned to receive a substrate thereon;and a translation mechanism positioned to translate the continuous waveelectromagnetic radiation source relative to the stage.
 20. The deviceof claim 19, wherein the plurality of electromagnetic radiation sourcescomprises at least one of an optical radiation source, an electron beamsource, a microwave energy source, and a laser diode.